NPN Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 5A max collector current and 20V collector-emitter breakdown voltage. This through-hole component offers a 150MHz transition frequency and a minimum hFE of 180. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 750mW. Packaged in an ammo pack, this lead-free and RoHS compliant transistor is housed in a TO-92-3 package.
Frequency150MHz
PackageTO-92-3
Current Rating5A
MountingThrough Hole
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Technical Specifications
Onsemi KSD5041QTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 180 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 750mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 20V |
| Weight | 0.24g |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.