The KSD526OTU is a TO-220 packaged NPN bipolar junction transistor with a maximum collector-emitter breakdown voltage of 80V and a maximum collector current of 4A. It has a maximum power dissipation of 30W and operates over a temperature range of -55°C to 150°C. The device is lead-free and RoHS compliant, making it suitable for use in a variety of applications. The transistor features a transition frequency of 8MHz and a DC rated voltage of 80V.
Frequency8MHz
PackageTO-220
Current Rating4A
MountingThrough Hole
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Technical Specifications
Onsemi KSD526OTU technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 8MHz |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 30W |
| RoHS Compliant | Yes |
| Transition Frequency | 8MHz |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD526OTU Datasheet
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