NPN Epitaxial Silicon Transistor designed for through-hole mounting in a TO-220-3 package. Features a maximum collector current of 4A and a collector-emitter voltage (VCEO) of 80V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 8MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 30W. This RoHS compliant component is supplied in a rail/tube package.
Frequency8MHz
PackageTO-220-3
Current Rating4A
MountingThrough Hole
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Technical Specifications
Onsemi KSD526YTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 450mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 8MHz |
| Gain Bandwidth Product | 8MHz |
| Height | 18.95mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Collector Current | 4A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 8MHz |
| DC Rated Voltage | 80V |
| Weight | 1.8g |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD526YTU Datasheet
Download the complete datasheet for Onsemi KSD526YTU to view detailed technical specifications.
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