NPN Epitaxial Silicon Darlington Transistor, designed for through-hole mounting in a TO-220 package. Features a 100V collector-emitter breakdown voltage and 5A continuous collector current. Offers a minimum DC current gain (hFE) of 2000 and a maximum collector-emitter saturation voltage of 1.5V. Operates across a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.5W. This RoHS compliant component is supplied in a rail/tube package.
PackageTO-220
Current Rating5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi KSD560RTSTU technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | 5A |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 9.4mm |
| hFE Min | 2000 |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD560RTSTU Datasheet
Download the complete datasheet for Onsemi KSD560RTSTU to view detailed technical specifications.
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