NPN Silicon Transistor, TO-126 package, featuring a 400V Collector-Emitter Voltage (VCEO) and 700V Collector Base Voltage (VCBO). This through-hole component handles a continuous 1.5A collector current with a maximum power dissipation of 20W. Operating across a wide temperature range from -65°C to 150°C, it offers a transition frequency of 4MHz. The device is RoHS compliant and lead-free.
Onsemi KSE13003H1ASTU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 400V |
| Weight | 0.761g |
| RoHS | Compliant |
No datasheet is available for this part.
