The KSH112GTM is a surface-mount NPN transistor with a maximum collector current of 2A and a maximum power dissipation of 1.75W. It has a collector-emitter breakdown voltage of 100V and a collector-emitter saturation voltage of 2V. The transistor is packaged in a TO-252-3 case and is rated for operation over a temperature range of -65°C to 150°C.
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Onsemi KSH112GTM technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Continuous Collector Current | 2A |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 20W |
| Transition Frequency | 25MHz |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
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