The KSH112GTM_NB82051 is a surface mount NPN transistor with a maximum collector current of 2A and a maximum operating temperature of 150°C. It features a TO-252-3 package and a transition frequency of 25MHz. The transistor has a collector-emitter breakdown voltage of 100V and a maximum power dissipation of 1.75W. It is suitable for high-frequency applications and can operate in temperatures up to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi KSH112GTM_NB82051 technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 3V |
| Emitter Base Voltage (VEBO) | 5V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Transition Frequency | 25MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi KSH112GTM_NB82051 Datasheet
Download the complete datasheet for Onsemi KSH112GTM_NB82051 to view detailed technical specifications.
No datasheet is available for this part.