The KSH112ITU is an NPN bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 2A. It is packaged in a TO-251-3 case and is designed for through-hole mounting. The transistor has a maximum power dissipation of 1.75W and operates within a temperature range of -65°C to 150°C. It is compliant with RoHS regulations and has a minimum current gain of 200.
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Onsemi KSH112ITU technical specifications.
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 25MHz |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSH112ITU to view detailed technical specifications.
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