PNP Epitaxial Silicon Transistor, surface mountable in a DPAK package. Features a maximum collector current of 6A and a collector-emitter voltage of 100V. Offers a minimum DC current gain (hFE) of 15 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 1.75W. RoHS compliant and lead-free.
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Onsemi KSH42CTF technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -1.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | -6A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 2.3mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -100V |
| Weight | 0.26037g |
| Width | 6.1mm |
| RoHS | Compliant |
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