NPN Epitaxial Silicon Transistor, designed for through-hole mounting in a TO-251-3 package. Features a maximum collector current of 8A and a collector-emitter voltage of 80V. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 50MHz. Operates within a temperature range of -65°C to 150°C, with a power dissipation of 1.75W. This RoHS compliant component is lead-free.
Frequency50MHz
PackageTO-251-3
Current Rating8A
MountingThrough Hole
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Technical Specifications
Onsemi KSH44H11ITU technical specifications.
General
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 80V |
| Weight | 0.34308g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSH44H11ITU Datasheet
Download the complete datasheet for Onsemi KSH44H11ITU to view detailed technical specifications.
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