PNP Epitaxial Silicon Transistor designed for general-purpose amplification and switching applications. Features a maximum collector current of 8A and a collector-emitter breakdown voltage of 80V. Operates with a transition frequency of 40MHz and a minimum DC current gain (hFE) of 60. Packaged in a TO-251 through-hole mount, this RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
Frequency40MHz
PackageTO-251
Current Rating-8A
MountingThrough Hole
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Technical Specifications
Onsemi KSH45H11ITU technical specifications.
General
| Package/Case | TO-251 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| Height | 6.1mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Collector Current | 8A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSH45 |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -80V |
| Weight | 0.34308g |
| Width | 2.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSH45H11ITU Datasheet
Download the complete datasheet for Onsemi KSH45H11ITU to view detailed technical specifications.
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