NPN Epitaxial Silicon Transistor, TO-92-3 package, featuring a 60V Collector Emitter Voltage (VCEO) and 60V Collector Base Voltage (VCBO). This component offers a maximum collector current of 500mA and a transition frequency of 100MHz. With a minimum DC current gain (hFE) of 50 and a maximum power dissipation of 625mW, it operates within a temperature range of -55°C to 150°C. Designed for through-hole mounting, this RoHS compliant transistor is supplied in an ammo pack.
Frequency100MHz
PackageTO-92-3
Current Rating500mA
MountingThrough Hole
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Technical Specifications
Onsemi KSP05TA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 60V |
| Weight | 0.24g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSP05TA Datasheet
Download the complete datasheet for Onsemi KSP05TA to view detailed technical specifications.
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