
NPN Epitaxial Silicon Transistor, TO-92 package, featuring a 300V Collector-Emitter Voltage (VCEO) and 300V Collector Base Voltage (VCBO). This bipolar junction transistor offers a maximum collector current of 500mA and a transition frequency of 50MHz. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 625mW. Designed for through-hole mounting, this RoHS compliant component is supplied in bulk packaging.
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Onsemi KSP42BU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 4.58mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 300V |
| Weight | 0.179g |
| Width | 3.86mm |
| RoHS | Compliant |
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