
PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features 80V collector-emitter breakdown voltage (VCEO) and 80V collector-base voltage (VCBO). Offers a maximum collector current of 500mA and a transition frequency of 150MHz. Operates from -55°C to 150°C with a minimum hFE of 100. Through-hole mount, lead-free, and RoHS compliant.
Onsemi KSP8599CTA technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Series | KSP8599 |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -80V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSP8599CTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
