
PNP Epitaxial Silicon Transistor, 2000-FNFLD. Features a Collector Emitter Voltage (VCEO) of 400V and a maximum Collector Current of 300mA. This through-hole mounted component offers a minimum hFE of 50 and a maximum power dissipation of 625mW. Operating temperature range spans from -55°C to 150°C. The TO-92-3 package is lead-free and RoHS compliant.
Onsemi KSP94TA technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | -750mV |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 750mV |
| Current Rating | -300mA |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 300mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -400V |
| Weight | 0.24g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSP94TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
