The L14G2 is a TO-18 packaged NPN phototransistor with a collector emitter breakdown voltage of 45V and a maximum collector current of 500mA. It has a maximum power dissipation of 600mW and is RoHS compliant. The device is rated for operation between -65°C and 125°C and is available in bulk packaging with 500 units per package. The phototransistor has a viewing angle of 20° and is suitable for use in a variety of optical sensing applications.
PackageTO-18
Current Rating500mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi L14G2 technical specifications.
General
| Package/Case | TO-18 |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Current Rating | 500mA |
| Lead Free | Lead Free |
| Max Collector Current | 500uA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Orientation | Top View |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 600mW |
| RoHS Compliant | Yes |
| Viewing Angle | 20° |
| DC Rated Voltage | 45V |
| Wavelength | 880nm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi L14G2 Datasheet
Download the complete datasheet for Onsemi L14G2 to view detailed technical specifications.
No datasheet is available for this part.