The L14N1 is a TO-18 packaged NPN phototransistor with a collector-emitter breakdown voltage of 30V and a maximum power dissipation of 600mW. It operates over a temperature range of -65°C to 125°C and is RoHS compliant. The device is mounted through a hole and has a viewing angle of 80°.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power600mW
Quick Jump:
Technical Specifications
Onsemi L14N1 technical specifications.
General
| Package/Case | TO-18 |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Fall Time | 16us |
| Lead Free | Lead Free |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Orientation | Top View |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 600mW |
| RoHS Compliant | Yes |
| Viewing Angle | 80° |
| Wavelength | 880nm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi L14N1 Datasheet
Download the complete datasheet for Onsemi L14N1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
