
The L14N1 is a TO-18 packaged NPN phototransistor with a collector-emitter breakdown voltage of 30V and a maximum power dissipation of 600mW. It operates over a temperature range of -65°C to 125°C and is RoHS compliant. The device is mounted through a hole and has a viewing angle of 80°.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi L14N1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-18 |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Fall Time | 16us |
| Lead Free | Lead Free |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Orientation | Top View |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 600mW |
| RoHS Compliant | Yes |
| Viewing Angle | 80° |
| Wavelength | 880nm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi L14N1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
