NPN Bipolar Junction Transistor (BJT) in a compact SC-88/SC70-6/SOT-363 6-lead package. Features a maximum collector current of 200mA and a collector-emitter breakdown voltage of 45V. Offers a high DC current gain (hFE) of 500 and a transition frequency of 700MHz. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 150mW. This RoHS compliant component is supplied on a 3000-piece tape and reel.
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Onsemi MBT6429DW1T1G technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 55V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 700MHz |
| Height | 1mm |
| hFE Min | 500 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 200mA |
| Max Frequency | 700MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 700MHz |
| DC Rated Voltage | 40V |
| Width | 1.35mm |
| RoHS | Compliant |
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