The MC1413BDR2 is a surface mount NPN transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It operates over a temperature range of -40°C to 85°C and is packaged in a SOIC package. The transistor has a high current gain of 1000 and a low collector-emitter saturation voltage of 1.6V. It is not RoHS compliant and contains lead.
PackageSOIC
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi MC1413BDR2 technical specifications.
General
| Package/Case | SOIC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 1.6V |
| hFE Min | 1000 |
| Lead Free | Contains Lead |
| Max Collector Current | 500mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Surface Mount |
| Number of Elements | 7 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MC1413BDR2 Datasheet
Download the complete datasheet for Onsemi MC1413BDR2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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