NPN Darlington bipolar junction transistor, surface mount, featuring a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. This device offers a minimum hFE of 1000 and a collector-emitter saturation voltage of 1.6V. Packaged in a 16-pin SOIC, it operates within a temperature range of -40°C to 85°C and is RoHS compliant.
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Onsemi MC1413BDR2G technical specifications.
| Package/Case | SOIC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | 500mA |
| Halogen Free | Halogen Free |
| Height | 0.157inch |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 0.393inch |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Surface Mount, Through Hole |
| Number of Elements | 7 |
| Output Current | 500mA |
| Output Voltage | 50V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Width | 0.059inch |
| RoHS | Compliant |
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