High voltage, high current NPN bipolar junction transistor (BJT) driver array in a PDIP package. Features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. Offers a minimum hFE of 1000 and a low collector-emitter saturation voltage of 1.6V. Designed for through-hole mounting with a 25-unit rail/tube packaging. Operates across a wide temperature range from -40°C to 85°C, with RoHS and halogen-free compliance.
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Onsemi MC1413BPG technical specifications.
| Package/Case | PDIP |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | 500mA |
| Halogen Free | Halogen Free |
| Height | 3.43mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 19.55mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Number of Elements | 7 |
| Output Current | 500mA |
| Output Voltage | 50V |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Weight | 0.057419oz |
| Width | 6.85mm |
| RoHS | Compliant |
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