High voltage, high current NPN bipolar junction transistor (BJT) driver array in a 16-lead SOIC surface-mount package. Features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. Offers a minimum hFE of 1000 and a collector-emitter saturation voltage of 1.6V. Operates across a temperature range of -20°C to 85°C and is RoHS compliant.
PackageSOIC
Current Rating500mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi MC1413DG technical specifications.
General
| Package/Case | SOIC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | 500mA |
| Halogen Free | Halogen Free |
| Height | 1.5mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 10mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -20°C |
| Mount | Surface Mount |
| Number of Elements | 7 |
| Output Current | 500mA |
| Output Voltage | 50V |
| Package Quantity | 48 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MC1413DG Datasheet
Download the complete datasheet for Onsemi MC1413DG to view detailed technical specifications.
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