High voltage, high current NPN bipolar junction transistor (BJT) driver array featuring seven elements in a PDIP-16 through-hole package. Offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. Achieves a minimum hFE of 1000 with a collector-emitter saturation voltage of 1.6V. This RoHS and Halogen Free component operates within a temperature range of -20°C to 85°C.
PackagePDIP
Current Rating500mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi MC1413PG technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | 500mA |
| Halogen Free | Halogen Free |
| Height | 3.43mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 19.55mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -20°C |
| Mount | Through Hole |
| Number of Elements | 7 |
| Output Voltage | 50V |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Weight | 0.057419oz |
| Width | 6.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MC1413PG Datasheet
Download the complete datasheet for Onsemi MC1413PG to view detailed technical specifications.
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