The device is a single gate driver intended for discrete or module IGBTs in high-power motor-control and UPS applications. It can also drive power MOSFETs and bipolar transistors, and its output stage provides up to 1.0 A source current and 2.0 A sink current. Protection functions include selectable desaturation or overcurrent sensing, programmable fault blanking, short-circuit protection, and undervoltage lockout. It operates from -40 C to +105 C ambient, supports negative gate drive capability, and is offered in 8-pin PDIP and SOIC packages.
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Onsemi MC33153 technical specifications.
| Output source current | 1.0A |
| Output sink current | 2.0A |
| Supply voltage | 20 maxV |
| Operating ambient temperature | -40 to +105°C |
| Storage temperature | -65 to +150°C |
| Propagation delay, input to output rise | 80 typns |
| Propagation delay, input to output fall | 120 typns |
| Output rise time | 17 typns |
| Output fall time | 17 typns |
| UVLO startup voltage | 12 typV |
| UVLO disable voltage | 11 typV |
| Overcurrent threshold | 65 typmV |
| Short-circuit threshold | 130 typmV |
| Fault blanking/desaturation threshold | 6.5 typV |
| Standby supply current | 7.2 typmA |
| Operating supply current | 7.9 typmA |
| Pb-free | Yes |
| Halide-free | Yes |
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