P-channel enhancement mode silicon power MOSFET, surface mountable in a 3-pin MCPH package. Features a 30V drain-source voltage, 1.6A continuous drain current, and ±20V gate-source voltage. Offers a maximum drain-source on-resistance of 295mΩ at 10V, with typical gate charge of 2.2nC and input capacitance of 82pF. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 800mW.
PackageMCPH
MountingSurface Mount
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Technical Specifications
Onsemi MCH3375-TL-H technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
MCPH
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
2
Package Width (mm)
1.6
Package Height (mm)
0.88(Max)
Seated Plane Height (mm)
0.85
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
1.6A
Material
Si
Maximum Gate Threshold Voltage
2.6V
Maximum Drain Source Resistance
295@10VmOhm
Typical Gate Charge @ Vgs
2.2@10VnC
Typical Gate Charge @ 10V
2.2nC
Typical Input Capacitance @ Vds
82@10VpF
Maximum Power Dissipation
800mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi MCH3375-TL-H Datasheet
Download the complete datasheet for Onsemi MCH3375-TL-H to view detailed technical specifications.
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