P-channel enhancement mode silicon power MOSFET, surface mountable in a 3-pin MCPH package. Features a 30V drain-source voltage, 1.6A continuous drain current, and ±20V gate-source voltage. Offers a maximum drain-source on-resistance of 295mΩ at 10V, with typical gate charge of 2.2nC and input capacitance of 82pF. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 800mW.
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Onsemi MCH3375-TL-H technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | MCPH |
| Lead Shape | Flat |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.88(Max) |
| Seated Plane Height (mm) | 0.85 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 1.6A |
| Material | Si |
| Maximum Gate Threshold Voltage | 2.6V |
| Maximum Drain Source Resistance | 295@10VmOhm |
| Typical Gate Charge @ Vgs | 2.2@10VnC |
| Typical Gate Charge @ 10V | 2.2nC |
| Typical Input Capacitance @ Vds | 82@10VpF |
| Maximum Power Dissipation | 800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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