Single P-channel power MOSFET featuring a 20V drain-source breakdown voltage and 3A continuous drain current. Offers a low 83mΩ drain-to-source resistance. Designed for efficient switching with fast turn-on (8.1ns) and turn-off (42ns) times. Housed in a compact SOT-23-3 package, this component operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 1W.
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| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 83mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.85mm |
| Input Capacitance | 375pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 83mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 8.1ns |
| Width | 1.6mm |
| RoHS | Compliant |
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