N-channel enhancement mode power MOSFET featuring 20V drain-source voltage and 2A continuous drain current. This single-element silicon MOSFET is housed in a 3-pin MCPH package with flat leads, designed for surface mounting. Key specifications include a maximum drain-source resistance of 104 mOhm at 4.5V, typical gate charge of 2.9 nC, and typical input capacitance of 175 pF. The compact lead-frame SMT package measures 2mm x 1.6mm x 0.88mm, suitable for PCB applications.
PackageMCPH
MountingSurface Mount
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Technical Specifications
Onsemi MCH3481-TL-H technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
MCPH
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
2
Package Width (mm)
1.6
Package Height (mm)
0.88(Max)
Seated Plane Height (mm)
0.85
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±9V
Maximum Continuous Drain Current
2A
Material
Si
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
175@10VpF
Maximum Power Dissipation
800mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi MCH3481-TL-H Datasheet
Download the complete datasheet for Onsemi MCH3481-TL-H to view detailed technical specifications.
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