Single P-Channel Power MOSFET featuring a -20V Drain to Source Breakdown Voltage and a continuous drain current of 4.5A. Optimized for efficient switching with a low Rds(on) of 49mΩ at Vgs=10V. This surface-mount device offers fast switching characteristics with a turn-on delay of 8.4ns and fall time of 63ns. Encased in a compact SC-88FL / MCPH6 package, it operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W.
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Onsemi MCH6337-TL-E technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 63ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.85mm |
| Input Capacitance | 670pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 49mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 69ns |
| Turn-On Delay Time | 8.4ns |
| Width | 1.6mm |
| RoHS | Compliant |
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