
Single P-Channel Power MOSFET featuring a -30V Drain to Source Breakdown Voltage and a continuous drain current capability of 4.5A. Offers a low on-resistance of 56mΩ (typical) and 73mΩ (maximum) at a 10V gate-source voltage. This surface-mount device, housed in an SC-88FL / MCPH6 package, operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 1.5W. Designed for efficient switching with a turn-on delay of 8.2ns and a fall time of 60ns, it is RoHS compliant and halogen-free.
Onsemi MCH6342-TL-H technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 56mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Height | 0.85mm |
| Input Capacitance | 650pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 73mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 8.2ns |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MCH6342-TL-H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
