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Technical Specifications
Onsemi MCH6601-TL-E technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10.4R |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Dual |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 7.5pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| Rds On Max | 10.4R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 24ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MCH6601-TL-E Datasheet
Download the complete datasheet for Onsemi MCH6601-TL-E to view detailed technical specifications.
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