The MCH6604-TL-E is a dual N-channel junction field-effect transistor with a maximum operating temperature of -55°C to 150°C. It has a maximum power dissipation of 800mW and a continuous drain current of 250mA. The device features a drain to source breakdown voltage of 50V and a drain to source resistance of 7.8 ohms. It is available in a surface mount package and is lead free and RoHS compliant.
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Onsemi MCH6604-TL-E technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 250mA |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 7.8R |
| Drain to Source Voltage (Vdss) | 50V |
| Element Configuration | Dual |
| Fall Time | 105ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 6.6pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| Rds On Max | 7.8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 190ns |
| Turn-On Delay Time | 18ns |
| RoHS | Compliant |
No datasheet is available for this part.
