Dual N-channel and P-channel Junction Field-Effect Transistor (JFET) designed for small signal applications. Features a Drain to Source Breakdown Voltage of -30V for the P-channel and 30V for the N-channel. Offers a continuous drain current of 200mA and a Drain to Source Resistance (Rds On Max) of 3.7Ω. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 800mW. Packaged in a compact SC-88FL (MCPH6) format, supplied on a 3000-piece tape and reel.
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Onsemi MCH6613-TL-E technical specifications.
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 3.7R |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Dual |
| Fall Time | 120ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.85mm |
| Input Capacitance | 7pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| Rds On Max | 3.7R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 155ns |
| Width | 1.6mm |
| RoHS | Compliant |
