Dual N-channel/P-channel enhancement mode power MOSFET, surface mountable in a 6-pin MCPH package. Features 20V drain-source voltage, ±10V gate-source voltage, and continuous drain currents of 2A (N-channel) and 1.5A (P-channel). Offers low on-resistance with 136mΩ (N-channel) and 266mΩ (P-channel) at 4.5V Vgs. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 800mW.
PackageMCPH
MountingSurface Mount
Quick Jump:
Technical Specifications
Onsemi MCH6660-TL-H technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | MCPH |
| Lead Shape | Flat |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.88(Max) |
| Seated Plane Height (mm) | 0.85 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 2@N Channel|1.5@P ChannelA |
| Maximum Gate Threshold Voltage | 1.3@N Channel|1.4@P ChannelV |
| Maximum Drain Source Resistance | [email protected]@N Channel|[email protected]@P ChannelmOhm |
| Typical Gate Charge @ Vgs | [email protected]@N Channel|[email protected]@P ChannelnC |
| Typical Input Capacitance @ Vds | 128@10V@N Channel|120@10V@P ChannelpF |
| Maximum Power Dissipation | 800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi MCH6660-TL-H Datasheet
Download the complete datasheet for Onsemi MCH6660-TL-H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.