Single bridge rectifier diode with a maximum repetitive peak reverse voltage of 1000V and a breakdown voltage of 1000V. Features four silicon diode elements in a 4-terminal, dual terminal position configuration. Designed for surface mount applications with an operating temperature range from -55°C to 150°C.
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Technical Specifications
Onsemi MDB10S technical specifications.
General
Max Operating Temperature
150
Number of Terminals
4
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
4
Diode Element Material
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
1000
Breakdown Voltage-Min
1000
Compliance
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.10.00.80
REACH
not_compliant
Military Spec
False
Datasheet
Onsemi MDB10S Datasheet
Download the complete datasheet for Onsemi MDB10S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.