Single bridge rectifier diode with a maximum repetitive peak reverse voltage of 1000V and a breakdown voltage of 1000V. Features four silicon diode elements in a 4-terminal, dual terminal position configuration. Designed for surface mount applications with an operating temperature range from -55°C to 150°C.
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Technical Specifications
Onsemi MDB10S technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 1000 |
| Breakdown Voltage-Min | 1000 |
Compliance
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.80 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Onsemi MDB10S Datasheet
Download the complete datasheet for Onsemi MDB10S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.