The Onsemi MDB10SV is a silicon bridge rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It features four diode elements with a breakdown voltage of at least 1000 volts. The device has four terminals and is packaged in a R-PDSO-G4 package type. The Onsemi MDB10SV is suitable for use in a variety of applications due to its high voltage rating and temperature range.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi MDB10SV datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 1000 |
| Breakdown Voltage-Min | 1000 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.80 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Onsemi MDB10SV to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
