Single N-Channel Logic Level Power MOSFET featuring 20V drain-source breakdown voltage and a continuous drain current of 2.8A. This component offers a maximum drain-source on-resistance of 85mΩ. Designed for surface-mount applications, it is housed in a compact SOT-23-3 package. Key electrical characteristics include a 1V threshold voltage and a 500mV nominal gate-source voltage. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 1.25W.
PackageSOT-23-3
Current Rating2.8A
PolarityN-CHANNEL
Power1.25W
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Technical Specifications
Onsemi MGSF2N02ELT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.8A |
| Current Rating | 2.8A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 85MR |
| Element Configuration | Single |
| Fall Time | 95ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.01mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Nominal Vgs | 500mV |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | 20V |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MGSF2N02ELT1G Datasheet
Download the complete datasheet for Onsemi MGSF2N02ELT1G to view detailed technical specifications.
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