NPN bipolar power transistor featuring a 140V collector-emitter breakdown voltage and a 15A continuous collector current. This through-hole component offers a maximum power dissipation of 200W and a minimum DC current gain (hFE) of 25. Operating across a wide temperature range from -65°C to 200°C, it is housed in a TO-204-3 package. The transition frequency is 2MHz, and the device is RoHS compliant and lead-free.
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Onsemi MJ15001G technical specifications.
| Package/Case | TO-204-3 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 140V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 15A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 2MHz |
| Height | 1.05inch |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Length | 1.55inch |
| Max Collector Current | 15A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200W |
| Package Quantity | 100 |
| Packaging | Tray |
| Polarity | NPN |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Transition Frequency | 2MHz |
| DC Rated Voltage | 140V |
| Width | 0.335inch |
| RoHS | Compliant |
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