
PNP bipolar junction transistor (BJT) in a TO-204-3 package, rated for 250V collector-emitter voltage and 16A continuous collector current. Features a maximum power dissipation of 250W and a transition frequency of 4MHz. Operates across a wide temperature range from -65°C to 200°C. This component is RoHS compliant and lead-free.
Onsemi MJ15025G technical specifications.
| Package/Case | TO-204-3 |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 1.4V |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 4V |
| Current Rating | -16A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| Height | 8.51mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 39.37mm |
| Max Collector Current | 16A |
| Max Frequency | 4MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250W |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Tray |
| Polarity | PNP |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | -250V |
| Width | 26.67mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MJ15025G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
