PNP Bipolar Junction Transistor (BJT) in a D2PAK package. Features an 80V collector-emitter breakdown voltage and a maximum collector current of 10A. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 40MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 50W. This component is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi MJB45H11G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | D2PAK |
| Collector Base Voltage (VCBO) | 5V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Frequency | 40MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -80V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MJB45H11G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
These are design resources that include the Onsemi MJB45H11G
Quarterly product discontinuance notice from ON Semiconductor for various discrete, analog, and power products, including last buy and ship dates for 2007.
