PNP Bipolar Junction Transistor (BJT) in a D2PAK package. Features an 80V collector-emitter breakdown voltage and a maximum collector current of 10A. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 40MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 50W. This component is RoHS compliant.
Frequency40MHz
PackageD2PAK
Current Rating-10A
PolarityPNP
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Technical Specifications
Onsemi MJB45H11G technical specifications.
General
| Package/Case | D2PAK |
| Collector Base Voltage (VCBO) | 5V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Frequency | 40MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJB45H11G Datasheet
Download the complete datasheet for Onsemi MJB45H11G to view detailed technical specifications.
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