NPN Darlington bipolar junction transistor (BJT) with a 100V collector-emitter breakdown voltage and 2A continuous collector current. Features a 2V collector-emitter saturation voltage and 25MHz transition frequency. Packaged in a TO-251-3 (IPAK) case, this device offers 1.75W power dissipation and operates within a -65°C to 150°C temperature range. RoHS and Halogen Free compliant.
PackageTO-251-3
Current Rating2A
PolarityNPN
Power1.75W
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Technical Specifications
Onsemi MJD112-1G technical specifications.
General
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Continuous Collector Current | 2A |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Halogen Free | Halogen Free |
| Height | 6.22mm |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20W |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 25MHz |
| DC Rated Voltage | 100V |
| Width | 2.38mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD112-1G Datasheet
Download the complete datasheet for Onsemi MJD112-1G to view detailed technical specifications.
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