NPN Darlington Bipolar Junction Transistor (BJT) designed for power switching applications. Features a 100V breakdown voltage and a continuous collector current of 2A. Dissipates up to 1750mW and is housed in a 3-pin DPAK package with a single terminal position. Maximum operating temperature reaches 150°C.
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Technical Specifications
Onsemi MJD112T4G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Onsemi MJD112T4G Datasheet
Download the complete datasheet for Onsemi MJD112T4G to view detailed technical specifications.
No datasheet is available for this part.