NPN Darlington Bipolar Power Transistor, 2A continuous collector current, 100V collector-emitter breakdown voltage. Features 1.75W power dissipation, 1000 minimum hFE, and 25MHz transition frequency. Packaged in a DPAK surface-mount case, this component operates from -65°C to 150°C. RoHS compliant and lead-free.
Onsemi MJD112TF technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 2.3mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 25MHz |
| DC Rated Voltage | 100V |
| Weight | 0.26037g |
| Width | 6.1mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MJD112TF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.