The MJD117-001 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 2A. It is packaged in a TO-251-3 case and is rated for operation between -65°C and 150°C. The transistor is not RoHS compliant and contains lead.
Onsemi MJD117-001 technical specifications.
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Continuous Collector Current | 2A |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | 5V |
| Lead Free | Contains Lead |
| Max Collector Current | 20uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 20W |
| RoHS Compliant | No |
| Transition Frequency | 25MHz |
| DC Rated Voltage | -100V |
| RoHS | Not Compliant |
No datasheet is available for this part.
