The MJD117T4 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 2A. It has a maximum power dissipation of 1.75W and is packaged in a TO-252-3 package. The transistor operates over a temperature range of -65°C to 150°C and is lead-free. It is not RoHS compliant, but is Reach SVHC compliant.
Onsemi MJD117T4 technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 3V |
| Continuous Collector Current | 2A |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | 5V |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 20W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 25MHz |
| DC Rated Voltage | -100V |
| RoHS | Not Compliant |
No datasheet is available for this part.
