The MJD3055T4 is a NPN transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 10A. It has a gain bandwidth product of 2MHz and a maximum power dissipation of 1.75W. The transistor is packaged in a TO-252-3 package and is rated for operation between -55°C and 150°C. It is lead-free and compliant with certain RoHS requirements.
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| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector-emitter Voltage-Max | 8V |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 2MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 20W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 2MHz |
| DC Rated Voltage | 60V |
| RoHS | Not Compliant |
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