NPN bipolar junction power transistor in a DPAK package, featuring a 60V collector-emitter breakdown voltage and a 10A maximum collector current. This device offers a minimum DC current gain (hFE) of 20 and a transition frequency of 2MHz. Designed for surface-mount applications, it operates within a temperature range of -55°C to 150°C and is supplied on a 2500-piece tape and reel.
Frequency2MHz
PackageDPAK
Current Rating10A
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi MJD3055T4G technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 8V |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 2MHz |
| Gain Bandwidth Product | 2MHz |
| Height | 2.38mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 10A |
| Max Frequency | 500kHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
| DC Rated Voltage | 60V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD3055T4G Datasheet
Download the complete datasheet for Onsemi MJD3055T4G to view detailed technical specifications.
No datasheet is available for this part.
Product Images
