NPN Bipolar Junction Transistor (BJT) with a 100V collector-emitter voltage and 3A continuous collector current. Features a maximum collector-emitter saturation voltage of 1.2V and a transition frequency of 3MHz. Packaged in a TO-251 through-hole mount, this lead-free and RoHS compliant component offers a power dissipation of 1.56W and operates between -65°C and 150°C.
Frequency3MHz
PackageTO-251
Current Rating3A
MountingThrough Hole
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Technical Specifications
Onsemi MJD31CITU technical specifications.
General
| Package/Case | TO-251 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 6.3mm |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Length | 6.8mm |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 100V |
| Weight | 0.34308g |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD31CITU Datasheet
Download the complete datasheet for Onsemi MJD31CITU to view detailed technical specifications.
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