NPN silicon power transistor with a 3A continuous collector current and 100V collector-emitter breakdown voltage. Features a maximum collector-emitter saturation voltage of 1.2V and a minimum DC current gain (hFE) of 25. Housed in a TO-252-3 (DPAK-3) plastic package, this component offers a transition frequency of 3MHz and a maximum power dissipation of 15W. Operates across a temperature range of -65°C to 150°C.
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Onsemi MJD31CT4 technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector-emitter Voltage-Max | 1.2V |
| Current | 3A |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 15W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 3MHz |
| Voltage | 100V |
| DC Rated Voltage | 100V |
| RoHS | Not Compliant |
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