The MJD31CTF_NBDD001 is a surface-mount NPN bipolar junction transistor with a maximum collector current of 3A and a maximum operating temperature of 150°C. It features a gain bandwidth product of 3MHz and a minimum current gain of 25. The transistor has a maximum power dissipation of 1.56W and is packaged in a TO-252-3 case. It is lead-free and suitable for use in a variety of applications.
PackageTO-252-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi MJD31CTF_NBDD001 technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 1.2V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Transition Frequency | 3MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD31CTF_NBDD001 Datasheet
Download the complete datasheet for Onsemi MJD31CTF_NBDD001 to view detailed technical specifications.
No datasheet is available for this part.