The MJD32CRL is a PNP transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 50uA. It features a gain bandwidth product of 3MHz and a collector-emitter saturation voltage of 1.2V. The transistor is packaged in a TO-252-3 surface mount package and has a maximum power dissipation of 1.56W. It operates over a temperature range of -65°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi MJD32CRL technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector-emitter Voltage-Max | 1.2V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 25 |
| Max Collector Current | 50uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Package Quantity | 1800 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 3MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MJD32CRL Datasheet
Download the complete datasheet for Onsemi MJD32CRL to view detailed technical specifications.
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